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    2. SiO2/Si基底CVD石墨烯,石墨烯套裝,SiO2基底單層石墨烯,SiO2基底單/雙層石墨烯

      石墨烯專家


      CVD石墨烯:SiO2/Si基底
      CVD Graphene on SiO2/Si

      Graphene Film Trial Kit, 石墨烯套裝
      Monolayer Graphene on 285 nm SiO2 Wafer, 285nm SiO2基底單層石墨烯
      Monolayer Graphene on 90 nm SiO2 Wafer, 90nm SiO2基底單層石墨烯"
      Single/Double Layer Graphene on 285 nm Silicon Dioxide Wafer, 285nm SiO2基底單/雙層石墨烯
      Single/Double Layer Graphene on 90 nm Silicon Dioxide Wafer, 90nm SiO2基底單/雙層石墨烯

       

      CVD石墨烯:SiO2/Si基底 CVD Graphene on SiO2/Si
      Graphene Film Trial Kit
      石墨烯膜套裝
        石墨烯膜套裝 Includes:
      Two Single/Double Layer Graphene samples on 285 nm Silicon Dioxide Wafers: 1cm x 1 cm
      Two 10mmx10mm samples, Graphene Film on Nickel: 1 cm x 1 cm
      One sample of Multilayer Graphene on a 285 nm Silicon Dioxide Wafer: 1 cm x 1 cm
      One sample of Monolayer Graphene on a 285 nm Silicon Dioxide Wafer: 1 cm x 1 cm
      One sample of Monolayer Graphene on Glass: 1" x 1"

      If you are interested in investigating numerous different samples of graphene coatings, this trial kit is ideal. All of the samples are made by Chemical Vapor Deposition and give a strong Raman signal.

      A great value for students and scientific researchers alike interested in trying different samples.
      Monolayer Graphene on 285 nm SiO2 Wafer
      285nm SiO2基底單層石墨烯
      4” (100mm) wafer SiO2基底單層石墨烯 Monolayer graphene on silicon wafers (p-doped) with a 285 nanometer silicon dioxide coating.

      Properties of Graphene Film:
      The thickness and quality of our graphene films is controlled by Raman Spectroscopy
      The graphene coverage of this product is about 95%
      The graphene film is continuous, with occasional holes and cracks
      The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation
      Sheet Resistance: 660-1,500 Ω/□

      Our graphene films are predominantly single-layer graphene (more than 97%) with occasional small multilayer islands.

      Properties of Silicon/Silicon Dioxide Wafers:
      Oxide Thickness: 285 nm
      Color: Violet
      Wafer thickness: 525 micron
      Resistivity: 0.001-0.005 ohm-cm
      Type/Dopant: P/Boron
      Orientation: <100>
      Front Surface: Polished
      Back Surface: Etched

      Our graphene films are manufactured using a PMMA assisted transfer method.

      拉曼光譜圖 / 光學圖像 / 4” (100mm) wafer 尺寸圖
      10mm×10mm 10片 SiO2基底單層石墨烯
      10mm×10mm 5片 SiO2基底單層石墨烯
      Monolayer Graphene on 90 nm SiO2 Wafer
      90nm SiO2基底單層石墨烯
      10mm×10mm 5片 SiO2基底單層石墨烯 Monolayer graphene on silicon wafers with 90 nanometer silicon dioxide coating.

      Properties of Graphene Film:
      The thickness and quality of our graphene films is controlled by Raman Spectroscopy
      The graphene coverage of this product is about 95%
      The graphene film is continuous, with occasional holes and cracks
      The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation
      Sheet Resistance: 660-1,500 Ω/□

      Our graphene films are predominantly single-layer graphene (more than 97%) with occasional small multilayer islands.


      Properties of Silicon/Silicon Dioxide Wafers:
      Oxide Thickness: 90 nm
      Color: Violet
      Wafer thickness: 525 micron
      Resistivity: 0.001-0.005 ohm-cm
      Type/Dopant: P/Boron
      Orientation: <100>
      Front Surface: Polished
      Back Surface: Etched

      Our graphene films are manufactured using a PMMA assisted transfer method.

      拉曼光譜圖 / 光學圖像
      Single/Double Layer Graphene on 285 nm Silicon Dioxide Wafer
      285nm SiO2基底單/雙層石墨烯
      10mm×10mm 10片 SiO2基底單層石墨烯 Mono and bilayer graphene on silicon wafers (p-doped) with a 285 nanometer silicon dioxide coating.

      The samples have nearly full monolayer coverage with 10-30% coverage of bilayer graphene islands. They are a great low-cost alternative to monolayer graphene for select purposes.

      Properties of Graphene Film:
      The graphene coverage of this product is about 95%
      The graphene film is continuous, with occasional holes and cracks
      The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation

      Properties of Silicon/Silicon Dioxide Wafers:
      Oxide Thickness: 285 nm
      Color: Violet
      Wafer thickness: 525 micron
      Resistivity: 0.001-0.005 ohm-cm
      Type/Dopant: P/Boron
      Orientation: <100>
      Front Surface: Polished
      Back Surface: Etched

      Our graphene films are manufactured using a PMMA assisted transfer method.

      光學圖像 / 典型SEM圖像
      Single/Double Layer Graphene on 90 nm Silicon Dioxide Wafer
      90nm SiO2基底單/雙層石墨烯
      10mm×10mm 10片 SiO2基底單層石墨烯 Mono and bilayer graphene on silicon wafers (p-doped) with a 90 nanometer silicon dioxide coating.

      The samples have nearly full monolayer coverage with 10-30% coverage of bilayer graphene islands. They are a great low-cost alternative to monolayer graphene for select purposes.

      Properties of Graphene Film:
      The graphene coverage of this product is about 95%
      The graphene film is continuous, with occasional holes and cracks
      The graphene film is polycrystalline, i.e. it consists of grains with different crystallographic orientation

      Properties of Silicon/Silicon Dioxide Wafers:
      Oxide Thickness: 90 nm
      Color: Violet
      Wafer thickness: 525 micron
      Resistivity: 0.001-0.005 ohm-cm
      Type/Dopant: P/Boron
      Orientation: <100>
      Front Surface: Polished
      Back Surface: Etched

      Our graphene films are manufactured using a PMMA assisted transfer method.

      光學圖像 / 典型SEM圖像

       


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